| Part Number: MMBZ20VALT1G | Manufacturer: Semiconductor Components Industries | NSN: 5961-01-660-7000 |
| Item Name : Semiconductor Devices Unitized | CAGE Code: 1MQ07 | FSC CODE: 5961 Semiconductor Devices and Associated Hardware |
We are pleased to inform you that Part Number MMBZ20VALT1G Semiconductor Devices Unitized. of manufacturer Semiconductor Components Industries associated with NSN 5961016607000 is in stock. You can request a quote for this part MMBZ20VALT1G by filling out the form provided below. Once the request is received, one of our representatives will get back to you within 15 minutes.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-660-7000 Item Description: Semiconductor Devicesunitized | 5961 | 016607000 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Mmbz20valt1g | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY | Mounting Method | TERMINAL |
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| AFZC | Function For Which Designed | TRANSIENT SUPPRESSOR AND ZENER DIODE |
| ABKW | Overall Height | 0.039 INCHES NOMINAL |
| TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
| CTMZ | Semiconductor Material | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| MRC | Decoded Requirement | Clear Text Reply |
| ABHP | Overall Length | 0.114 INCHES NOMINAL |
| ABBH | Inclosure Material | PLASTIC |
| ABMK | Overall Width | 0.094 INCHES NOMINAL |
| ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE PHOTO |
| CTMZ | Semiconductor Material | SILICON 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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